Asymmetry of MTJ Switching and Its Implication to STT-RAM Designs

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Provided by: European Design and Automation Association
Topic: Storage
Format: PDF
As one promising candidate for next-generation nonvolatile memory technologies, Spin-Transfer Torque Random Access Memory (STT-RAM) has demonstrated many attractive features, such as nanosecond access time, high integration density, non-volatility, and good CMOS process compatibility. In this paper, the authors reveal an important fact that has been neglected in STT-RAM designs for long: the write operation of a STT-RAM cell is asymmetric based on the switching direction of the MTJ (Magnetic Tunneling Junction) device: the mean and the deviation of the write latency for the switching from low-to high-resistance state is much longer or larger than that of the opposite switching.
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