Black-Box Leakage Power Modeling for Cell Library and SRAM Compiler

In this paper, the authors present an automatic leakage power modeling method for standard cell library as well as SRAM compiler. For this problem, there are two major challenges - the high sensitivity of leakage power to the temperature (e.g. the leakage power of an inverter can be different by 19.28X when temperature rises from 25

Provided by: edaa Topic: Storage Date Added: Jan 2011 Format: PDF

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