European Design and Automation Association
Phase Change Memory (PCM) is a promising candidate of emerging memory technology to complement or replace existing DRAM and NAND Flash memory. A key drawback of PCMs is limited write endurance. To address this problem, several static wear-leveling methods that change logical to physical address mapping periodically have been proposed. Although these methods have low space overhead, they suffer from unnecessary data migrations thereby failing to exploit the full lifetime potential of PCMs. This paper proposes a new dynamic wear-leveling method that reduces unnecessary data migrations by adopting a hot/cold swapping-based dynamic method.