Can MultiLevel Cell PCM Be Reliable and Usable? Analyzing the Impact of Resistance Drift

Provided by: Georgia Institute of Technology
Topic: Storage
Format: PDF
There are several emerging memory technologies looming on the horizon to compensate the physical scaling challenges of DRAM. Phase Change Memory (PCM) is one of such candidates proposed for being part of the main memory in computing systems. One salient feature of PCM is its Multi-Level Cell (MLC) property which can be used to multiply the memory capacity at the cell level. However, due to the nature of PCM that the value written to the cell can drift over time, PCM is prone to a unique type of soft errors, posing a great challenge for their practical deployment.

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