Provided by: Delft University of Technology
Date Added: Aug 2009
The Suspended Gate Field Effect Transistor (SG-FET) appears to have the potential to replace traditional FETs in sleep mode circuits, due to its abrupt switching enabled by electromechanical instability at a certain threshold voltage and its ultra low \"Off\" current (Ioff). This paper presents a preliminary assessment of the SG-FET potential if utilized as sleep transistor in real applications, e.g., microprocessors. The authors first evaluate various SG-FET instances in terms of switching delay, current capability, and leakage.