Association for Computing Machinery
Dynamic Random Access Memory (DRAM) has been used in main memory design for decades. However, DRAM consumes an increasing power budget and faces difficulties in scaling down for small feature size CMOS processing technologies. Compared to conventional DRAM, emerging Phase change Random Access Memory (PRAM) demonstrates superior power efficiency and processing scalability as VLSI technologies and integration density continue to advance. Nevertheless, using nano-scale fabrication technologies will unavoidably introduce design parameter variability in the manufacturing stage.