Circumventing Short Channel Effects in FETs: Review

Provided by: International Journal of Computer Applications
Topic: Hardware
Format: PDF
In this paper, the authors aim at providing a thorough and yet a collective evaluation of some commendable research works done over the past decade with the aim for reducing Short-Channel Effects (SCEs). The necessity for development of these technologies arose as short channel effects such as Drain-Induced Barrier Lowering (DIBL) and hot carrier effects arises manifold as the channel length is scaled further into the deep sub-micron region to accommodate changes in ULSI applications.

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