Comparison of CNTFET Based 6T SRAM and MOSFET Based 6T SRAM Using Hspice

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Provided by: International Journal of Emerging Technology and Advanced Engineering (IJETAE)
Topic: Hardware
Format: PDF
The basic VLSI (Very Large Scale Integration) circuit element is Metal-Oxide Semi-conductor Field Effect Transistor (MOSFET). Moore's law states that, design performance improves by reduction in gate length. The gate length reduction is also known as scaling. The continuous scaling of the circuit design will cause issues related to electrical performance of the chip. The device fabrication creates major problems when the geometry reaches to nanometer region. For the same purpose, the researchers have found Carbon Nano-Tubes (CNTs) as the new worthy candidate.
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