International Journal of Emerging Technology and Advanced Engineering (IJETAE)
In this paper, the authors present the comparison of single-gate SOI and multi-gate SOI MOSFETs. In the first part, they have presented two main fundamental problems of the "Ultimate" (sub-10nm) MOSFET scaling of single-gate geometry: the exponential growth of power consumption and sensitivity to fabrication uncertainties. These factors have played the decisive role in for eventual transfer of the CMOS industry to multi-gate SOI devices. In the second part, a thorough study of the corner effects in MuGFET's are carried out, and the influence of different parameters are analyzed.