Corner Effect in Multiplier SOI-FinFETs

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Provided by: Science Publishing Group
Topic: Hardware
Format: PDF
Recently, the dual-gate structure has attracted a great deal of attention for its potential as a technology driver for sub-hundred-nanometer MOSFET. SOI (Silicon-On-Insulator) multi-FinFET was analyzed by a three-dimensional numerical device simulator and its electrical characteristics and potential distribution in the oxide and the silicon in the section perpendicular to the flow of the current were compared for single-fin, three-fin and five-fin FET to investigate the influence of fins number on corner effect in dual-gate SOI multi-FinFET and the authors provide a comparison with a tri-gate SOI multi-FinFET structure.
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