Design and Analyse of Silicon Carbide JFET Based Inverter

Provided by: WSEAS
Topic: Hardware
Format: PDF
In this paper, the authors present the design and testing of a high frequency, high efficiency inverter using Silicon Carbide (SiC) JFET power module. A rugged negative voltage gate drive circuit is used to solve the normally on problem of JFET devices and avoid the bridge shot-through during power on or power off. The circuit can provide over-voltage protection, over current protection and over temperature protection circuits to ensure the safe operation of the SiC JFET module and the resultant inverter system.

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