Design and Analysis of 5-T SRAM Cell in 32nm CMOS and CNTFET Technologies

Provided by: Engineering and Technology Publishing
Topic: Hardware
Format: PDF
MOS transistor plays a vital role in today VLSI technology. In CMOS based design, symmetry should be followed in circuit operation. Most of the complex circuits are allowed to design in CMOS, however, there are several drawbacks present in this complementary based design. CMOS has lost its credentialed during scaling beyond 32nm. Scaling down causes severe short channel effects which are difficult to suppress. As a result of these effects, many researchers are undergone to find suitable alternate devices. Therefore, it is necessary to find alternative way suitable for particular design, instead of CMOS.

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