Design and Analysis of Double-Gate MOSFETs for Ultra-Low Power Radio Frequency Identification (RFID): Device and Circuit Co-Design

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Provided by: MDPI AG
Topic: Hardware
Format: PDF
Recently, Double-Gate MOSFETs (DGMOSFETs) have been shown to be more optimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS. However, DGMOSFETs for sub-threshold circuit design have not been much explored in comparison to those for strong inversion-based design. In this paper, various configurations of DGMOSFETs, such as tied/independent gates and symmetric/asymmetric gate oxide thickness are explored for ultra-low power and high efficient Radio Frequency IDentification (RFID) design.
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