Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors

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Provided by: Journal of Semiconductor Technology and Science (JSTS)
Topic: Hardware
Format: PDF
The authors design and analyze the n-channel Junction-Less Fin-shaped Field-Effect Transistor (JL FinFET) with 10nm gate length and compare its performances with those of the conventional bulk type fin-shaped FET (conventional bulk FinFET). A three-Dimensional (3-D) device simulation were performed to optimize the device design parameters including the Width (Wfin) and Height (Hfin) of the fin as well as the channel doping concentration (Nch). Based on the design optimization, the two devices were compared in terms of Direct-Current (DC) and Radio-Frequency (RF) characteristics.
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