Design and Architectural Assessment of 3-D Resistive Memory Technologies in FPGAs

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Provided by: Institute of Electrical & Electronic Engineers
Topic: Storage
Format: PDF
Emerging Non-Volatile Memories (ENVMs) such as Phase-Change Random Access Memories (PCRAMs) or Oxide-based Resistive Random Access Memories (OxRRAMs) are promising candidates to replace Flash and Static Random Access Memories in many applications. This paper introduces a novel set of building blocks for Field-Programmable Gate Arrays (FPGAs) using ENVMs. The authors propose an ENVM-based configuration point, a look-up table structure with reduced programming complexity and a high-performance switchbox arrangement. They show that these blocks yield an improvement in area and write time of up to 3x and 33x, respectively, versus a regular flash implementation.
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