Design and Comparative Performance Analysis of 1-T DRAM Cell with Nanoscale SOI and MOS Structures

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Provided by: IRD India
Topic: Hardware
Format: PDF
Presently, low power device design and implementation have got a significant role to play in VLSI circuit design. VLSI circuit efficiency, either memory or processor can be significantly improved through a combination of device scaling, new device structures and material property improvement to its fundamental limits. Since, conventional silicon technology has been suffered from the fundamental physical limitations in the sub-micron or nanometer region, some alternative device technologies like Silicon-On-Insulator (SOI) technology has been emerged.
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