Design Implications of Memristor-Based RRAM Cross-Point Structures

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Provided by: edaa
Topic: Storage
Format: PDF
Emerging Non-Volatile Memory (NVM) technologies are getting mature in recent years. These emerging NVM technologies have demonstrated great potentials for the universal memory hierarchy design. Among all the technology candidates, Resistive Random-Access Memory (RRAM) is considered to be the most promising as it operates faster than Phase-Change memory (PCRAM), and it has simpler and smaller cell structure than magnetic memory (MRAM or STT-RAM). In contrast to a conventional MOS-accessed memory cell, memristor-based RRAM has the potential of forming a cross-point structure without using access devices, achieving ultra high density.
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