Research In Motion
Power consumption plays an important role in any integrated circuit and is listed as one of the top three challenges in International technology roadmap for semiconductors. The low-power clubbed with low-energy has become an important issue in recent trends of VLSI. This paper presents pre-layout simulations of a 3T XNOR cell at low voltages. The main objective of design is low power consumption and full voltage swing which is achieved at low supply voltage. In this paper, XNOR gates with MTCMOS and without MTCMOS technique are compared taking power consumption as parameter by varying voltage, frequency and temperature.