International Journal of Advanced Research in Electrical, Electronics and Instrumentation Engineering (IJAREEIE)
STT-MRAM is a Non-Volatile Memories (NVMs) which uses resistive switching. Spin Transfer Torque (STT) is a promising emerging memory technology because of its various advantages such as non-volatility, high density, virtually infinite endurance and scalability and CMOS compatibility. This STT-MRAM has a low power, high speed and good endurance that allow them to be combined directly with logic units. This integration of memory with logic could increase power and die area efficiency. This paper presents firstly a theoretical investigation non-volatile logic gates using RS-NVL.