Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping

Provided by: Iranian Journal of Electrical & Electronic Engineering (IJEEE)
Topic: Hardware
Format: PDF
Resonant Gate Transistor (RGT) was first introduced in 1967 by the researchers. However, this device had a Q factor approximately equal to 100 due to its low mass. High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device has a retrograde channel to achieve high output current. For this purpose, abrupt retrograde channel and Gaussian retrograde channels have been investigated.

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