Association for Computing Machinery
As one of the newly introduced Resistive Random Access Memory (ReRAM) devices, this paper has shown an in-depth study of Conductive-Bridging Random Access Memory (CBRAM) for Non-Volatile Memory (NVM) computing. Firstly, a CBRAM-crossbar based memory is evaluated with accurate physical-level model and circuit-level characterization. It is then deployed as NVM component with a 3D hybrid integration of SRAM/DRAM, where one layer of CBRAM-crossbar is designed for data-retention under power gating to reduce leakage power from SRAM/DRAM at other layers. Moreover, a block-level data-retention scheme is designed to only write back dirty data from SRAM/DRAM to CBRAM-crossbar.