Semiconductor memories are most important subsystem of modern digital systems. In new era the scaling of silicon technology has been ongoing, due to scaling large memory can be fabricated on a single chip as results memories are capable to store and retrieve large amount of information at high speed. But due to high density, power dissipation gets increases and speed decreases. So there is need for the design of low power and high speed circuit in memory. This paper presents a 5-transistor dual voltage SRAM cell intended for the advanced microprocessor cache market using 1.8v/0.18um CMOS technology.