Design of Non-Volatile Memory Based On Improved Writing Circuit STT-MRAM Technique

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Provided by: International Journal of Innovative Research in Science, Engineering and Technology (IJIRSET)
Topic: Hardware
Format: PDF
Spin-Transfer Torque Magnetic RAM (STT-MRAM) is a one of the memory application for next generation. It has many attractive features like high density and low leakage. However, it comes with high write power due to large current required to achieve fast switching speed. The STT-MRAM target mainly to replace SRAM or DRAM. It is used as a working memory in the cache, high access speed is one of the most critical performances. The objective of the authors' project is to contribute one such storage device by making NVM based on Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM).
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