International Journal of Science and Engineering Applications (IJSEA)
STT-RAM is an emerging nonvolatile memory that has all the characteristics of a universal memory. It is nonvolatile, highly scalable, has low power consumption, unlimited endurance, high density and multilevel cell capability. This paper evaluates the performance of Spin-Torque Transfer Random Access Memory (STT-RAM) basic memory cell configurations in 45nm hybrid CMOS/MTJ process. Switching speed and current drawn by the cells have been calculated and compared. Cell design has been done using cadence tools. The results obtained show good agreement with theoretical results.