International Publisher for Advanced Scientific Journals (IPASJ)
Single electron devices have ultra-low power consumption and high integration density, which make them promising candidates as basic circuit elements of the next generation ultra-dense VLSI and ULSI circuits. In this paper, the design of two input XNOR gate using single-electron tunneling based linear threshold gate is presented for the first time. The logic operation of the gate is simulated and verified using Monte Carlo simulation. Free energy history and stability analysis have verified the correct functioning of the gate.