Design Trade-Offs for High Density Cross-Point Resistive Memory

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Provided by: Association for Computing Machinery
Topic: Storage
Format: PDF
With conventional memory technologies approaching their scaling limit, the search for a new technology has gained increased attention in the recent years. Resistive RAM (ReRAM), with its superior write latency and energy, small cell size and support for 3D stacking, has been a promising candidate among emerging memory technologies. A key advantage of ReRAM comes from its non-linear nature, which enables a cross-point array structure without having a dedicated access transistor for each cell. While the cross-point structure is effective in improving the memory density, it has inherent disadvantages which introduce extra design challenges.
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