Provided by: The International Journal of Innovative Research in Computer and Communication Engineering
Date Added: Mar 2015
In this paper, the authors look at conceptualization, propose and modeling of memory cell as a part of a Memristor based Content Addressable Memory (MCAM) architecture using a combination of switch having some fixed resistance value as memristor and n-type MOS devices (i.e. NOR-TYPE MCAM CELL and NAND-TYPE MCAM CELL). A typical Content Addressable Memory (CAM) cell forms a SRAM cell that has two n-type and two p-type MOS transistors, which requires both VDD and GND connections as well as well-plugs within each cell.