Resistive Random Access Memory (RRAM) is one of the universal memory candidates for computer systems. Although RRAM promises many attractive advantages (e.g., huge data storage, smaller form-factor, lower power consumption, non-volatility, etc.), there are many open issues that still need to be solved, especially those related to its quality and reliability. For instance, open defects may cause RRAM cell to enter an undefined state i.e., somewhere between logic 0 and making it hard to detect during manufacturing test. As a consequence, this may lead to test escapes (quality issue) and field failures (reliability issue).