Effect of Phase of Noise on the Performance of 6T SRAM Cell

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Provided by: Iosrjournals
Topic: Hardware
Format: PDF
The 6T SRAM cell is prone to noise during read operation, and during hold conditions. In this paper, a detailed study of the effect of the phase of noise has been done on 6T SRAM cell. The 6T SRAM has been subjected to different combinations of noises at the storage nodes and the read ability and write ability of the SRAM cell is examined considering different noise voltage levels. It is found that the effect is different under different combinations of the phases of the noise voltages.
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