Effects of a Barrier Layer in InGaAs Channel MOSFETs for Analog/ Mixed Signal System-on-Chip Applications

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Provided by: Interscience Open Access Journals
Topic: Hardware
Format: PDF
Addition of a barrier layer in an InGaAs MOSFET, which shows promise for high performance logic applications due to enhanced electron mobility, further improves the electron mobility. The authors report, for the first time, a detailed investigation of the impact of different barrier layers on the analog performance of an InGaAs MOSFET. The device parameters for analog applications, such as trans-conductance (gm), trans-conductance-to-drive current ratio (gm/IDS), drain conductance (gd), intrinsic gain, and unity-gain cutoff frequency (fT) are studied with the help of a device simulator.
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