Institute of Electrical & Electronic Engineers
Phase-Change Random Access Memory (PRAM) has become one of the most promising emerging memory technologies, due to its attractive features such as high density, fast access, non-volatility, and good scalability. The physical characteristics of a PRAM cell mainly depend on the material characteristic and the fabrication process. However, the access device and the operating voltage have significant impact on the PRAM performance, energy dissipation, and lifetime. In this paper, the authors study the design constraints for PRAM memory array, and propose design optimizations of the access device and the circuit operational voltage.