Carnegie Mellon University
In this paper, the authors explore the possibility of using STT-RAM technology to completely replace DRAM in main memory. Their goal is to make STT-RAM performance comparable to DRAM while providing substantial power savings. Towards this goal, they first analyze the performance and energy of STTRAM, and then identify key optimizations that can be employed to improve its characteristics. Specifically, using partial write and row buffer write bypass, they show that STT-RAM main memory performance and energy can be significantly improved.