Explicit Model of Cylindrical Surrounding Double-Gate MOSFET

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Provided by: WSEAS
Topic: Hardware
Format: PDF
The authors present an analytical and continuous DC model for un-doped Cylindrical Surrounding Double-Gate (CSDG) Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs) for which the drain current and subthreshold model is written as an explicit function of the applied voltages for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum. The model is based on a unified charge control model developed for this device. This CSDG MOSFET can be used as the RF switch for selecting the data streams from antennas for both the transmitting and receiving processes.
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