Failure and Reliability Analysis of STT-MRAM

Spin Transfer Torque Magnetic RAM (STT-MRAM) promises low power, great miniaturization prospective (e.g. 22nm) and easy integration with CMOS process. It becomes actually a strong non-volatile memory candidate for both embedded and standalone applications. However STT-MRAM suffers from important failure and reliability issues compared with the conventional solutions based on magnetic field switching. For example, a read current could write erroneously the stored data, the variability of ultra-thin oxide barrier drives high resistance variation and the injected current in the nanopillar induces lower lifetime etc.

Provided by: Reed Elsevier Topic: Hardware Date Added: Jul 2012 Format: PDF

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