Fluorine Effects on NMOS Characteristics and DRAM Refresh

Provided by: Journal of Semiconductor Technology and Science (JSTS)
Topic: Hardware
Format: PDF
The authors observed that in Chemical Vapor Deposition (CVD) tungsten silicide poly-gate scheme, the gate oxide thickness decreases as gate length is reduced and it intensifies the roll-off properties of transistor. This is because the fluorine diffuses laterally from WSix to the gate sidewall oxide in addition to its vertical diffusion to the gate oxide during gate re-oxidation process. When the channel length is very small, the gate oxide thickness is further reduced due to a relative increase of the lateral diffusion than the vertical diffusion.

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