Institute for Computer Sciences, Social-Informatics and Telecommunications Engineering
Hybrid nano (e.g. nanotube and nanowire)/CMOS circuits combine both the advantages of nano-devices and CMOS technologies; they have thus become the most promising candidates to relax the intrinsic drawbacks of CMOS circuits beyond Moore's law. A functional simulation model for an hybrid nano/CMOS design is presented in this paper. It is based on Optically Gated Carbon NanoTube Field Effect Transistors (OG-CNTFET), which can be used as 2-terminal programmable resistors. Their resistance can be adjusted precisely, reproducibly and in a non-volatile way, over three orders of magnitude.