High Speed EX-NOR Gate at 22nm High K Metal Gate Strained Si Technology Node

Provided by: International Journal of Recent Technology and Engineering (IJRTE)
Topic: Hardware
Format: PDF
In today's scenario it is necessary to have low power and high speed circuit. Sometimes only either of the two is sufficient, which means either only high speed or only low power circuit. The propagation delay of the normal EX-NOR circuit is calculated to be with reverse body bias. Also, the propagation delay of the same EX-NOR circuit is calculated with its body bias forward biased of Vdd/2. With forward body bias the propagation delay is reduced by 55.89% and this high speed EX-NOR circuit find its application where power penalty is acceptable

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