Id-Vd Output Characteristics and Transit-Time Model for Short-Gate Length Ion-Implanted GaAs MESFET Using MATLAB

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Provided by: International Journal of Engineering Research and Development (IJERD)
Topic: Hardware
Format: PDF
Two-dimensional analytical model for optically biased non-self-aligned and self-aligned short channel GaAs MESFETs is developed to show the photo effects on the Id-Vd characteristics. When light radiation having photon energy equal to or greater than the band gap energy of GaAs is allowed to fall, the drain current increases significantly as compared to dark condition due to photoconductive effect in parasitic resistances and photovoltaic effect at the gate Schottky-barrier region. This paper presents transit time model for short gate-length ion-implanted GaAs MESFET.
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