Impact of Direct Tunneling Current on CMOS Logic Circuit

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Provided by: AICIT
Topic: Hardware
Format: PDF
As dimensions of the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased, the gate leakage becomes more and more prominent and has been one of the most important limiting factors to MOSFET and circuits lifetime. Based on reliability theory and simulation, the Direct Tunneling current (DT) in MOSFET is studied in depth. Simultaneity, the static gate leakage current of two-input NAND gate is studied and the impact of direct tunneling gate leakage current on Complementary Metal Oxide Semiconductor (CMOS) logic circuits is revealed.
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