Provided by: International Journal of Electronics Communication and Computer Engineering
The design of high density chips in MOS VLSI technology requires that the packing density of MOSFETs use in circuits is as high as possible and consequently, that the transistor are as small as possible. The reduction of the size i.e. dimensions of MOSFETs can change the MOSFET characteristic. In this paper, the authors will examine in detail the non ideal effects on MOS characteristic. These are mainly due to the limitation impose on electrons drift characteristic in the channel and the modification of the threshold voltage due to the shortening channel length.