Provided by: Academy & Industry Research Collaboration Center
Date Added: Mar 2011
In this paper, the impact of strain and channel thickness on the performance of biaxial strained silicon MOSFET with 40nm channel length has been analyzed by simulation in TCAD sentaurus simulator. With the increase in the mole fraction of germanium at the interface of the channel region, the strain in the silicon channel increases and with it the mobility of the carriers increases and thus the drain current increases. The mole fraction in this paper is varied from 0 to 0.3. Other than mobility, the increase in strain also shows improvement in other performance parameters.