Improved NAND Flash Memories Storage Reliablity Using Nonlinear Multi Error Correction Codes

Provided by: International Journal of Engineering Trends and Technology
Topic: Hardware
Format: PDF
Multi-Level Cell (MLC) NAND flash memories are popular storage media because of their power efficiency and large storage density. Conventional reliable MLC NAND flash memories based on BCH codes or Reed-Solomon (RS) codes have a large number of undetectable and miscorrected errors. In this paper, the authors propose two general constructions of nonlinear multi-error correcting codes based on concatenations or generalized from Vasil'ev codes. The proposed constructions can generate non-linear bit-error correcting or digit-error correcting codes with very few or even no errors undetected or miscorrected for all code words.

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