Influence of Work Function Engineering on the Short Channel Effects of Nanoscale GeOI MOSFFETs

Provided by: IRD India
Topic: Hardware
Format: PDF
In the past few years, MOSFETs using germanium channel have received potential consideration for future nano-electronic devices due largely to enhanced carrier mobility in Ge. The authors present a model based on 2D surface potential approach for the nanoscale GeOI MOSFETs to compute various device parameters related to short channel effects taking into account interface-trapped-charge and fixed charge densities. Such parameters include threshold voltage, Drain Induced Barrier Lowering (DIBL) and sub-threshold swing. Their studies are extended to two types of devices-one having gate materials with a Constant Work Function (CWF) and the other with a Graded Work Function (GWF).

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