Journal of Semiconductor Technology and Science (JSTS)
Phase-Change Memory (PCM) is a promising technology that is anticipated to be used in the memory hierarchy of future computer systems. However, its access time is relatively slower than DRAM and it has limited endurance cycle. Due to this reason, PCM is being considered as a high speed storage medium (like swap device) or long-latency memory. In this paper, the authors adopt PCM as a virtual memory swap device and present a new page replacement policy that considers the characteristics of PCM.