International Journal of Engineering Sciences & Research Technology (IJESRT)
In this paper, the authors include Common Gate (CG) LNA for Ultra Wide Band (UWB) applications with CMOS (Complementary Metal-Oxide Semiconductor) trans conductance "gm" boosted. Noise distortion cancelled out by gm boosting technique and power minimization with help of current reuse technique. By CG-CS topology utilized to get more efficient parameters such as gain, stability, linearity and power dissipation. This design 0.13 um process CMOS technology which operated from 2 to 5GHz with 1v supply. The common gate LNA (Low-Noise Amplifier) design achieved forward gain (S21) of 15.50db and reverse isolation (S12) in the range - 47.59db to -42.53db and with input return loss (S11) and output return loss (S22) are -18.50db and -11.42db at 3.02GHz and 5.01GHz frequency range intensively noise figure improved in this paper up to 2.93db.