Low Power 3T XOR Cell Using IDDG MOSFET

Download Now
Provided by: International Journal of Computer Applications
Topic: Hardware
Format: PDF
In this paper, a new design of three transistor XOR gate is proposed using independent driven double gate MOSFET to achieve ultra-low power in sub threshold conduction. The proposed design has been compared with the three transistors XOR implemented using symmetrical driven double gate MOSFET in sub-threshold region. A three transistor XOR gate designed using Independent driven double gate MOSFET is showing improved results in terms of power consumption with varying input voltage, temperature and operating frequencies.
Download Now

Find By Topic