Low Power 3T XOR Cell Using IDDG MOSFET

Provided by: International Journal of Computer Applications
Topic: Hardware
Format: PDF
In this paper, a new design of three transistor XOR gate is proposed using independent driven double gate MOSFET to achieve ultra-low power in sub threshold conduction. The proposed design has been compared with the three transistors XOR implemented using symmetrical driven double gate MOSFET in sub-threshold region. A three transistor XOR gate designed using Independent driven double gate MOSFET is showing improved results in terms of power consumption with varying input voltage, temperature and operating frequencies.

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