Low Power Low Voltage High Speed Circuit Design Using Strained Silicon
A technique to design a low power low voltage high speed circuit is proposed in this paper. Supply voltage of 3.3v is widely used at present for MOSFET devices. But power dissipation depends not only on the supply voltage bot also on different factors. Every designer has the target to reduce the power dissipation without compromising the speed of the circuit. If a MOSFET consumes less power and less voltage and provide high speed it can be used in large circuits. This paper will show how the power dissipation can be reduced by using strained silicon MOSFET.