Institute of Electrical & Electronic Engineers
Phase Change Memory (PCM) has been widely studied as a potential DRAM alternative. The Multi-Level Cell (MLC) can further increase the memory density and reduce the fabrication cost by storing multiple bits in a single cell. Nevertheless, large write power, high write latency, as well as reliability issue resulted from the resistance drift, bring in challenges for MLC PCM based memory design. In contrast, the emerging Resistive Random Access Memory (ReRAM), which has similar MLC property as PCM, demonstrates better performance and energy efficiency compared to PCM. In addition, due to the physical switching behaviors of ReRAM cell, the resistance drift phenomenon does not exist.