Journal of Semiconductor Technology and Science (JSTS)
The Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is considered as a promising technology that can replace the conventional memory because of its fast access time, infinite endurance, low power consumption, good scalability and non-volatility. Macro-model of Magnetic Tunnel Junction (MTJ) for STT-MRAM has been developed. The macro-model can describe the dynamic behavior such as the state change of MTJ as a function of the pulse width of driving current and voltage. The statistical behavior has been included in the model to represent the variation of the MTJ characteristic due to process variation. The macro-model has been developed in Verilog-A.