Mechanisms of Low-Energy Operation of XCT-SOI CMOS Devices-Prospect of Sub-20-nm Regime

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Provided by: MDPI AG
Topic: Hardware
Format: PDF
In this paper, the authors describe the performance prospect of scaled Cross-Current Tetrode (XCT) CMOS devices and demonstrates the outstanding low-energy aspects of sub-30nm long gate XCT-SOI CMOS by analyzing device operations. The energy efficiency improvement of such scaled XCT CMOS circuits (two orders higher) stems from the "Source potential floating effect", which offers the dynamic reduction of effective gate capacitance. It is expected that this feature will be very important in many medical implant applications that demand a long device lifetime without recharging the battery.
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